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| Product Data Sheet October 14, 2005 6-13 GHz Low Noise Amplifier * * * * * * * * TGA8399B-SCC Key Features and Performance 6-13 GHz Frequency Range 1.5 dB Typical Noise Figure Midband 26 dB Nominal Gain High Input Power Handling: ~ 20dBm Balanced Input for Low VSWR 5V @ 65mA Self Bias 0.25um pHEMT Technology Chip Dimensions 3.1 x 2.4 x 0.15 mm Primary Applications * * Point-to-Point Radio X Band Radar, ECM Description The TriQuint TGA8399B-SCC is a monolithic selfbiased low noise amplifier with a balanced input for low VSWR. This LNA operates from 6 to 13 GHz with a typical mid band noise figure of 1.5 dB. The device features high gain of 26 dB across the band, while providing a nominal output power at P1dB gain compression of 11dBm. Typical input and output return loss is 18 dB. Ground is provided to the circuitry through vias to the backside metallization. The TGA8399B-SCC low noise amplifier is suitable for a variety of commercial and high frequency applications, C and X band applications such as radar receivers, electronic counter measures, decoys, jammers and phased array systems. At 5V the drain current is approximately 65 mA and can be increased or decreased by selection of the appropriate source resistors in each stage. For an application note concerning drain current selection see: http://www.triquint.com/company/divisions/millime ter_wave/AppNote_self_bias_of_8399b_c2.pdf Lead-free and RoHS compliant Typical Electrical Characteristics Self Bias, Vd=5V, 65mA 28 26 Small Signal Gain (dB) 24 22 20 18 16 14 12 10 8 6 7 8 9 10 11 Frequency (GHz) 12 13 0 Gain -3 -6 -9 -12 Return Loss (dB) Output RL -15 -18 -21 -24 Input RL -27 -30 6.0 5.5 5.0 Noise Figure (dB) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 6 7 8 9 10 11 Frequency (GHz) 12 13 14 13 12 P1dB (dBm) Pout 11 10 9 8 7 NF 6 5 4 TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 1 Product Data Sheet October 14, 2005 TGA8399B-SCC TABLE I MAXIMUM RATINGS 5/ SYMBOL V + PARAMETER Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current (Quiescent) Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature VALUE 8V -5V TO 0V 100 mA 22 dBm 1.95W 150 0C 320 C -65 to 150 0C 0 NOTES 4/ VI + 4/ PIN PD TCH TM TSTG 3/ 4/ 1/ 2/ 1/ 2/ These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. When operated at this bias condition with a base plate temperature of 70 0C, the median life is reduced from 9.2E+8 to 2.5E+6 hours. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. These ratings represent the maximum operable values for this device. 3/ 4/ 5/ TABLE II DC PROBE TEST (TA = 25 C 5 C) NOTES SYMBOL MIN IDSS1 IMAX Gm1 LIMITS MAX Information Only 169 99 0.5 8 8 290 239 1.5 30 30 UNITS mA mS mS V V V 1/ 1/ 1/ |VP1,2,3,4,5| |VBVGD1| |VBVGS1| 1/ VP, VBVGD, and VBVGS are negative. TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 2 Product Data Sheet October 14, 2005 TGA8399B-SCC TABLE III RF CHARACTERISTICS (TA = 25C + 5C) NOTE TEST MEASUREMENT CONDITIONS Self Bias, Vd=5V MIN 23 VALUE TYP 26 MAX UNITS 1/ Small Signal Gain F = 6 - 13 GHz dB Power Output @ 1 dB Gain Compression 2/ Noise Figure F = 6 - 13 GHz 11 dBm F = 6 - 13 GHz F = 10 GHz 2.0 2.5 -18 -9.5 dB dB dB 1/ Input Return Loss Magnitude F = 6 - 13 GHz Output Return Loss Magnitude 1/ F = 6 - 13 GHz -18 -9.5 dB 1/ 2/ RF probe data is taken at 1 GHz steps RF probe data is taken at 10 GHz. TABLE IV THERMAL INFORMATION PARAMETER RJC Thermal Resistance (channel to backside of carrier) TEST CONDITIONS Vd = 5 V ID = 65 mA Pdiss = 0.325 W TCH (OC) 82.14 RTJC (qC/W) 37.354 TM (HRS) 9.2E+8 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 3 Product Data Sheet October 14, 2005 TGA8399B-SCC Typical On-Wafer Electrical Characteristics Sefl Bias, Vd=5V, Room Temperature 29 28 27 26 25 5th 10th 20th 30th 40th 50th 60th 70th 80th 90th 95th Gain (dB) 24 23 6 7 8 9 10 11 12 13 Frequency (GHz) 3.0 2.5 5th 2.0 10th 20th 30th NF (dB) 40th 1.5 50th 60th 70th 80th 1.0 90th 95th 0.5 0.0 6 7 8 9 Frequency (GHz) 10 11 12 TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 4 Product Data Sheet October 14, 2005 TGA8399B-SCC Typical On-Wafer Electrical Characteristics Sefl Bias, Vd=5V, Room Temperature 0 -5 -10 5th 10th 20th 30th 40th 50th 60th 70th 80th 90th 95th -15 IRL (dB) -20 -25 -30 -35 -40 6 7 8 9 10 11 12 13 Frequency (GHz ) 0 -5 -10 5th 10th 20th 30th 40th 50th 60th 70th 80th 90th 95th -15 ORL (dB) -20 -25 -30 -35 -40 6 7 8 9 10 11 12 13 Frequency (GHz ) TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 5 Product Data Sheet October 14, 2005 TGA8399B-SCC Typical Performance vs Temperature Sefl Bias, Vd=5V, Room Temperature 30 29 28 Small Signal Gain (dB) 27 26 25 24 23 22 21 20 6 7 8 9 10 11 12 13 Frequency (GHz) +125C +75C +50C +25C +0C -25C -55C 5 4 +125C +75C +50C +25C +0C -25C -55C Noise Figure (dB) 3 2 1 0 6 7 8 9 10 11 12 13 Frequency (GHz) 15 14 13 Output P1dB (dBm) 12 11 10 9 8 7 6 5 7 8 9 10 Frequency (GHz) 11 12 13 +125C +75C +50C +25C +0C -25C -55C TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 6 Product Data Sheet October 14, 2005 TGA8399B-SCC Mechanical Drawing ! A & % % ! A $ ! ' ! " A & & & # A # & " # $ A " " $ % A # & ' ! A & $ ' A " ! % ' A $ " " A # ' & # A ' ""A'# %"A' ! % & ' ! " # % % A&' A"% $ & A"& !'A# " # $ ' "A$ % A % ! A & % % ! A " ! ' ! " A ! & ' # A % & " # $ A " $ % A " & " A " ' & A % ! Uu(AyuxxuyqqAuitq Ttuiwq(A#AA$A 7tuAqpsqAAhpAgpApuyquAgqAtAAiqqArAhpAgp 7tuAuqAxqgiq(AA#A 6pAPgpAAA#ARR# 6pAPgpAA$AR@AC 6pAPgpAA%AV8 6pAPgpAA&AR@AI 6pAPgpAA'AV8 AAA"AA" # AA # A$AA #AA A#AA& #AA A#AA& #AA A#AA& GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 7 Product Data Sheet October 14, 2005 Recommended Assembly Layout TGA8399B-SCC Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C. An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 8 |
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